BTBAS

雙(叔丁基氨基)硅烷 ([NH(C4H9)]2SiH2)

化學(xué)式	[NH(C4H9)]2SiH2
中文名稱	雙(叔丁基氨基)硅烷
英文名稱	Bis(t-butylamino)silane
CAS No.	186598-40-3
分子量	174
充裝系數(shù)
應(yīng)用	BTBAS是化學(xué)蒸氣液體化學(xué)的前軀體，可沉積均勻的氮化硅。
產(chǎn)品規(guī)格	≥99.9999999%

Silicon nitride has many applicaons in device fabricaon  because of its superior barrier properes and oxidaon  resistance. Typically NH3 and Cl2SiH2 mixtures are used to  deposit silicon nitride at near 800°C.  The volale NH4Cl byproduct of this reacon can lead to parcle formaon and  hazy films, and also deposit at the exhaust of the reactor tube. These deposits cause wafer and pump damage. Bis(terarybutylamino)silane (BTBAS) is a liquid chemical precursor for the chemical vapor deposion of uniform silicon nitride, silicon  oxynitride and silicon dioxide films.  The silicon nitride films  obtained using BTBAS are free of chlorine contaminaon at a relavely lower process temperature.